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DDR3 Memory

DDR3 is high-performance main memory. Over its predecessor, DDR2, DDR3 Memory offers better bandwidth and density in a smaller package along with a reduction in power consumption.

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38 total products

Part Number Description Memory
    Capacity Chip Manufacturer Feature Manufacturer Operating Temperature
Part Number Description Memory
    Capacity Chip Manufacturer Feature Manufacturer Operating Temperature
96D3-2G1333E-AP2 2G DDR3-1333 240Pin 256MX8 ECC Hynix Chip 2 GB HYNIX ECC Only Apacer 0 ~ 85°C (32 ~ 185°F)
96D3-2G1333ER-AP1 2G DDR3-1333 240Pin 256MX8 Registered Hynix Chip 2 GB HYNIX Registered Apacer 0 ~ 85°C (32 ~ 185°F)
96D3-2G1333NN-AP1 2G DDR3-1333 240Pin 256MX8 Unbuffered Hynix Chip 2 GB HYNIX Unbuffered Apacer 0 ~ 85°C (32 ~ 185°F)
96D3-2G1333NN-TR2 2G DDR3-1333 240Pin 128MX8 1.35V Unbuffered Samsung Chip 2 GB SAMSUNG Unbuffered Transcend 0 ~ 85°C (32 ~ 185°F)
96D3-4G1333E-AP 4G DDR3-1333 240Pin 256MX8 ECC Hynix Chip 4 GB HYNIX ECC Apacer 0 ~ 95°C (32 ~ 203°F)
96D3-4G1333NN-AP 4G DDR3-1333 240Pin 256MX8 Unbuffered Hynix Chip 4 GB HYNIX Unbuffered Apacer 0 ~ 95°C (32 ~ 203°F)
96D3-4G1600NN-APL 4G DDR3-1600 240Pin 256MX8 1.5V VLP Unbuffered Hynix Chip 4 GB HYNIX Unbuffered Apacer 0 ~ 95°C (32 ~ 203°F)
96D3-8G1600E-APL 8G DDR3-1600 240Pin 512MX8 1.5V VLP ECC Micron Chip 8 GB MICRON Unbuffered Apacer 0 ~ 95°C (32 ~ 203°F)
96D3-8G1600NN-APL 8G DDR3-1600 240Pin 512MX8 1.5V VLP Unbuffered Micron Chip 8 GB MICRON Unbuffered Apacer 0 ~ 95°C (32 ~ 203°F)
AQD-D316RV16-SM Advantech 16G DDR3-1600 240Pin 2GX4 1.5V VLP Registered Samsung Chip 16 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D31GN13-SX Advantech 1G DDR3-1333 240Pin 128MX8 1.35V Unbuffered Samsung Chip 1 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D31GN16-HC Advantech 1G DDR3-1600 240Pin 128MX16 1.5V Unbuffered Hynix Chip 1 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D38GRV16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.5V VLP Registered Samsung Chip 8 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L16R16-SM Advantech 16G DDR3-1600 240Pin 1GX4 1.35V Registered Samsung Chip 16 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L16RV16-SM Advantech 16G DDR3-1600 240Pin 2GX4 1.35V VLP Registered Samsung Chip 16 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L1GN16-HC Advantech 1G DDR3-1600 240Pin 128MX16 1.35V Unbuffered Hynix Chip 1 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L2GE16-SQ Advantech 2G DDR3-1600 240Pin 256MX8 1.35V ECC Samsung Chip 2 GB SAMSUNG ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L2GN16-HQ Advantech 2G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Hynix Chip 2 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L2GN16-SQ Advantech 2G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip 2 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L2GNV16-SQ Advantech 2G DDR3-1600 240Pin 256MX8 1.35V VLP Unbuffered Samsung Chip 2 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L32L13-SM Advantech 32G DDR3-1333 240Pin 2GX4 1.35V Registered Samsung Chip 32 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GE16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip 4 GB SAMSUNG ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN16-HG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Hynix Chip 4 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN16-MG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Micron Chip 4 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN16-MQ Advantech 4G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Micron Chip 4 GB MICRON Unbuffered Advantech -10 ~ 85°C (14 ~ 185°F)
AQD-D3L4GN16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN16-SQ Advantech 4G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN18-MG Advantech 4G DDR3-1866 240Pin 512X8 1.35V Unbuffered Micron Chip 4 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GNV16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V VLP Unbuffered Samsung Chip 4 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GR16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC and Registered Samsung Chip 4 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GE16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip 8 GB SAMSUNG ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GN16-HG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Hynix Chip 8 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GN16-MG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Micron Chip 8 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GN16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip 8 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GNV16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V VLP Unbuffered Samsung Chip 8 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GR13-SG Advantech 8G DDR3-1333 240Pin 512MX8 1.35V ECC and Registered Samsung Chip 8 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GR16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V ECC and Registered Samsung Chip 8 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GRV16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V VLP Registered Samsung Chip 8 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)

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